DocumentCode :
811341
Title :
Role of Nitrogen Atoms in Reduction of Electron Charge Traps in Hf-Based High- 
Dielectrics
Author :
Umezawa, N. ; Shiraishi, K. ; Torii, K. ; Boero, M. ; Chikyow, T. ; Watanabe, H. ; Yamabe, K. ; Ohno, T. ; Yamada, K. ; Nara, Y.
Author_Institution :
Nat. Inst. for Mater. Sci., Tsukuba
Volume :
28
Issue :
5
fYear :
2007
fDate :
5/1/2007 12:00:00 AM
Firstpage :
363
Lastpage :
365
Abstract :
Effects of nitrogen incorporation on suppression of electron charge traps in Hf-based high- kappa gate dielectrics have been studied by first-principles calculations, focusing on interactions between N atoms and electrons trapped at oxygen vacancies (VO´s). Our total energy calculations revealed that the formation energy of a doubly occupied state of VO is significantly increased in HfOxNy compared to that in HfO2 . This clearly indicates that the electron charge traps at VO´s are considerably suppressed by N incorporation
Keywords :
MIS structures; MOSFET; ab initio calculations; dielectric materials; electron traps; hafnium compounds; HfON; MOSFET; electron charge traps reduction; first-principles calculations; high-k gate dielectrics; oxygen vacancies; total energy calculations; Dielectric materials; Dielectrics and electrical insulation; Doping; Electron traps; Hafnium oxide; Laboratories; Lead compounds; Leakage current; Materials science and technology; Nitrogen; Dielectric materials; MOSFETs; doping; hafnium compounds; trapping$+$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2007.894655
Filename :
4160052
Link To Document :
