A 0.2-W Heterostructure Barrier Varactor Frequency Tripler at 113 GHz

Author

Vukusic, Josip ; Bryllert, Tomas ; Emadi, T. Arezoo ; Sadeghi, Mahdad ; Stake, Jan

Author_Institution

Dept. of Microtechnology & Nanoscience, Chalmers Univ. of Technol., Goteborg

Volume

28

Issue

5

fYear

2007

fDate

5/1/2007 12:00:00 AM

Firstpage

340

Lastpage

342

Abstract

We present a high-power InAlAs/InGaAs/InP heterostructure barrier varactor (HBV) frequency tripler. The HBV device topology was designed for efficient thermal dissipation and high efficiency. To verify simulations, the device was flip-chip soldered onto embedding microstrip circuitry on an aluminum nitride substrate. This hybrid circuit was then mounted in a waveguide block without any movable tuners. From the resulting RF measurements, the maximum output power was 195 mW at 113 GHz, with a conversion efficiency of 15%. The measured 3-dB bandwidth was 1.5%

Keywords

III-V semiconductors; aluminium compounds; flip-chip devices; frequency multipliers; gallium arsenide; indium compounds; microstrip circuits; varactors; 0.2 W; 113 GHz; 195 mW; InAlAs-InGaAs-InP; RF measurements; aluminum nitride substrate; device topology; flip-chip; frequency multiplier; heterostructure barrier varactor frequency tripler; hybrid circuit; microstrip circuitry; millimeter-wave devices; movable tuners; semiconductor diodes; terahertz source; thermal dissipation; thermal management; waveguide block; Aluminum nitride; Circuit simulation; Circuit topology; Frequency; Indium compounds; Indium gallium arsenide; Indium phosphide; Microstrip; Tuned circuits; Varactors; Frequency multiplier; heterostructure barrier varactor (HBV); high-power operation; millimeter-wave devices; semiconductor diodes; terahertz source; thermal management;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.895376

Filename

4160053