Title :
An insulated shallow extension structure for bulk MOSFET
Author :
Shih, Chun-Hsing ; Chen, Yi-Min ; Lien, Chenhsin
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Taiwan, Taiwan
Abstract :
This brief proposes possible a replacement of shallow p-n junction with insulated shallow extension (ISE) structure for bulk MOSFET. The shallow extension is defined by the sidewall thermal oxide rather than the implanted p-n junction. With this insulator for extension and main junction, a heavier halo doping concentration can be used. Thus, the threshold-voltage roll-off and the junction leakage current can be minimized simultaneously. This structure can be a good alternative for junction structures in sub-100-nm regimes.
Keywords :
CMOS integrated circuits; MOSFET; dielectric thin films; doping profiles; leakage currents; bulk MOSFET; dielectric pockets; fully CMOS-compatible process; halo doping concentration; insulated shallow extension structure; junction leakage current; shallow p-n junction replacement; short-channel effects; sidewall thermal oxide; source/drain engineering; threshold-voltage roll-off; Dielectrics and electrical insulation; Doping profiles; Fabrication; Germanium silicon alloys; Large scale integration; Leakage current; MOSFET circuits; Silicon germanium; Silicon on insulator technology; Thermal conductivity;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.818284
