An insulated shallow extension structure for bulk MOSFET

Author

Shih, Chun-Hsing ; Chen, Yi-Min ; Lien, Chenhsin

Author_Institution

Dept. of Electr. Eng., Nat. Tsing Hua Univ., Taiwan, Taiwan

Volume

50

Issue

11

fYear

2003

Firstpage

2294

Lastpage

2297

Abstract

This brief proposes possible a replacement of shallow p-n junction with insulated shallow extension (ISE) structure for bulk MOSFET. The shallow extension is defined by the sidewall thermal oxide rather than the implanted p-n junction. With this insulator for extension and main junction, a heavier halo doping concentration can be used. Thus, the threshold-voltage roll-off and the junction leakage current can be minimized simultaneously. This structure can be a good alternative for junction structures in sub-100-nm regimes.

Keywords

CMOS integrated circuits; MOSFET; dielectric thin films; doping profiles; leakage currents; bulk MOSFET; dielectric pockets; fully CMOS-compatible process; halo doping concentration; insulated shallow extension structure; junction leakage current; shallow p-n junction replacement; short-channel effects; sidewall thermal oxide; source/drain engineering; threshold-voltage roll-off; Dielectrics and electrical insulation; Doping profiles; Fabrication; Germanium silicon alloys; Large scale integration; Leakage current; MOSFET circuits; Silicon germanium; Silicon on insulator technology; Thermal conductivity;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2003.818284

Filename

1239068