The influence of VLSI technology evolution on radiation-induced latchup in space systems

Author

Johnston, A.H.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

43

Issue

2

fYear

1996

fDate

4/1/1996 12:00:00 AM

Firstpage

505

Lastpage

521

Abstract

Changes in technology and device scaling have generally increased the sensitivity of VLSI devices to latchup from single interactions of heavy particles in space. This paper discusses latchup mechanisms, comparing latchup from heavy particles in space with electrically induced latchup, which has been more widely studied. The effects of technology changes and device scaling on latchup susceptibility are discussed as well. Test methods and the interpretation of latchup results are also included, along with predictions of the effects of device evolution and scaling on latchup susceptibility in space

Keywords

CMOS integrated circuits; VLSI; electric breakdown; integrated circuit technology; integrated circuit testing; radiation effects; radiation hardening (electronics); space vehicle electronics; transients; CMOS; MOSFET; VLSI technology; breakdown; charge collection; device scaling; fabrication; hardness; heavy ions; heavy particles; latchup susceptibility; predictions; radiation-induced latchup; single interactions; space systems; temperature dependence; testing; two transistor model; CMOS technology; Circuit testing; Electronics industry; Integrated circuit technology; Propulsion; Protons; Space technology; Temperature; Very large scale integration; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.490897

Filename

490897