Title :
A Ultra-Wideband Amplitude Modulation (AM) Detector Using Schottky Barrier Diodes Fabricated in Foundry CMOS Technology
Author :
Sankaran, Swaminathan ; O, Kenneth K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL
fDate :
5/1/2007 12:00:00 AM
Abstract :
Utility of Schottky diodes fabricated in foundry digital 130-nm CMOS technology is demonstrated by implementing an ultra-wideband (UWB) amplitude modulation detector consisting of a low-noise amplifier (LNA), a Schottky diode rectifier, and a low-pass filter. The input and output matching of the detector is better than -10 dB from 0-10.3 GHz and 0-1.7 GHz, respectively, and almost covers the entire UWB frequency band (3.1-10.6 GHz). The measured peak conversion gain is -2.2dB. The sensitivity over the band for amplitude modulation with the minimum E b/No of 6 dB is between -53 and -56 dBm. The power consumption is only 8.5 mW
Keywords :
CMOS digital integrated circuits; Schottky diodes; UHF integrated circuits; amplitude modulation; field effect MMIC; peak detectors; ultra wideband technology; -2.2 dB; 0 to 10.3 GHz; 130 nm; 8.5 mW; Schottky barrier diodes; Schottky diode rectifier; UWB frequency band; foundry digital CMOS technology; low-noise amplifier; low-pass filter; ultra-wideband amplitude modulation detector; Amplitude modulation; CMOS technology; Detectors; Digital filters; Foundries; Low-noise amplifiers; Rectifiers; Schottky barriers; Schottky diodes; Ultra wideband technology; Amplitude modulation; CMOS; Schottky barrier diode; detector; rectifier; ultra-wideband;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2007.894300
