Title :
On the short-channel theory for MOS transistor
Author :
Conti, Massimo ; Turchetti, Claudio
Author_Institution :
Dipartimento di Electtronica, Ancona Univ., Italy
fDate :
12/1/1991 12:00:00 AM
Abstract :
An attempt is made to derive rigorous analysis for the short-channel MOS transistor on the basis of the 2-D Poisson´s equation. The analysis is able to predict a correct dependence of the threshold voltage on channel length and drain voltage, avoids the need for the definition of an average depletion charge density, and gives more physical insight into the short-channel effects
Keywords :
insulated gate field effect transistors; semiconductor device models; surface potential; 2D Poisson equation; MOS transistor; channel length; drain voltage; short-channel theory; surface potential; threshold voltage; Boundary conditions; Data analysis; Helium; MOS devices; MOSFET circuits; Performance analysis; Poisson equations; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
