Title :
Ferromagnetic Semiconductor Heterostructures for Spintronics
Author :
Dietl, Tomasz ; Ohno, Hideo ; Matsukura, Fumihiro
Author_Institution :
Lab. for Cryogenic & Spintronic Res., Polish Acad. of Sci., Warsaw
fDate :
5/1/2007 12:00:00 AM
Abstract :
Ferromagnetism in transition-metal-doped III-V and II-VI compound semiconductors and their heterostructures allow exploration of unprecedented possibilities, in which spin degrees of freedom and more common charge degrees of freedom are combined. These include quantum heterostructures that incorporate ferromagnetism, electric field as well as light control of ferromagnetism, and magnetization reversal by electrical means. Possibilities of achieving high ferromagnetic-transition temperature are also discussed
Keywords :
Hall effect; II-VI semiconductors; III-V semiconductors; arsenic compounds; ferromagnetic materials; gallium compounds; magnetic circular dichroism; magnetic tunnelling; magnetoelectronics; manganese compounds; (GaMn)As; (InMn)As; II-VI compounds; III-V compounds; anomalous Hall effect; ferromagnetic semiconductor; heterostructures; magnetic circular dichroism; magnetic tunneling junctions; magnetization manipulation; p-d Zener model; spintronics; Laboratories; Lighting control; Magnetic materials; Magnetic semiconductors; Magnetization reversal; Magnetoelectronics; Material storage; Semiconductor materials; Temperature; Tunneling magnetoresistance; (Ga,Mn)As; (In,Mn)As; Anomalous Hall effect; II–VI compounds; III–V compounds; ferromagnetic semiconductors; magnetic circular dichroism; magnetic tunneling junctions; magnetization manipulation; p–d Zener model;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.894622
