Analytical device model for submicrometer MOSFET´s

Author

Sonoda, Ken´ichiro ; Taniguchi, Kenji ; Hamaguchi, Chihiro

Author_Institution

Dept. of Electron. Eng., Osaka Univ., Japan

Volume

38

Issue

12

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

2662

Lastpage

2668

Abstract

A drain current model applicable to deep submicrometer MOSFETs is proposed. This pseudo-two-dimensional device model includes the velocity overshoot effect by using the extended-drift-diffusion (EDD) model. Calculated current-voltage characteristics agree well with the reported experimental data for deep submicrometer MOSFETs. The model is applicable to small-geometry MOSFETs down to L=0.1 μm, whereas conventional modes without the velocity overshoot are valid to 0.25 μm

Keywords

carrier mobility; insulated gate field effect transistors; semiconductor device models; 0.1 to 0.25 micron; carrier drift velocity; current-voltage characteristics; deep submicrometer MOSFETs; drain current model; electron mobility; extended drift diffusion model; pseudo-two-dimensional device model; small-geometry MOSFETs; transconductance; velocity overshoot effect; Analytical models; Circuit simulation; Computational modeling; Current-voltage characteristics; Degradation; Electron mobility; Fabrication; MOSFET circuits; Nonuniform electric fields; Very large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.158688

Filename

158688