Title :
Contact resistance for small contacts [MOSFET]
Author :
Cumberbatch, Ellis ; Mahinthakumar, Ganamanikam
Author_Institution :
Dept. of Math., Claremont Graduate Sch., CA, USA
fDate :
12/1/1991 12:00:00 AM
Abstract :
An asymptotic analysis for current flow to small contacts in MOSFET source/drain regions is obtained. The formula for end resistance is compared with numerical simulations. It shows good agreement for contacts whose width is smaller than half the diffusion width
Keywords :
boundary-value problems; contact resistance; insulated gate field effect transistors; semiconductor device models; MOSFET source/drain regions; asymptotic analysis; boundary valve problem; contact resistance; current flow; diffusion width; end resistance; model; numerical simulations; small contacts; Conducting materials; Conductivity; Contact resistance; Electrical resistance measurement; Electrostatics; Laplace equations; MOSFET circuits; Manufacturing processes; Mathematics; Shape;
Journal_Title :
Electron Devices, IEEE Transactions on
