Title :
Correlation between surface-state density and impact ionization phenomena in GaAs MESFET´s
Author :
Paccagnella, A. ; Zanoni, E. ; Tedesco, C. ; Lanzieri, C. ; Cetronio, A.
Author_Institution :
Dipartimento di Elettronica e Inf., Padova Univ., Italy
fDate :
12/1/1991 12:00:00 AM
Abstract :
GaAs MESFET´s passivated with PECVD SiN show a lower surface-state density in comparison with SiO passivated devices, as deduced from g m(f) dispersion curves. Lower carrier multiplication due to impact ionization phenomena in the active channel and consequently a higher breakdown voltage are observed in SiO passivated samples. These effects are attributed to a lower peak electric field near the drain edge of the gate, deriving from an accumulation of negative surface charge
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; impact ionisation; passivation; surface electron states; GaAs; MESFET; PECVD; SiN passivation; SiO passivation; active channel; breakdown voltage; carrier multiplication; impact ionization phenomena; negative surface charge accumulation; peak electric field; surface-state density; transconductance dispersion curves; Delay; Electrodes; Frequency; Gallium arsenide; Impact ionization; MESFETs; Plasma temperature; Silicon compounds; Surface treatment; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
