DocumentCode
811898
Title
Experimental studies of single-event gate rupture and burnout in vertical power MOSFETs
Author
Titus, Jeffrey L. ; Wheatley, C. Frank
Author_Institution
NSWC, Crane, IN, USA
Volume
43
Issue
2
fYear
1996
fDate
4/1/1996 12:00:00 AM
Firstpage
533
Lastpage
545
Abstract
Numerous studies have revealed that vertical power MOSFETs are susceptible to single-event burnout (SEB) and single-event gate rupture (SEGR), resulting in degraded performance or even catastrophic failure when operated in a cosmic-ray environment like space. This paper summarizes many of those experimental studies and examines the problems, test methodologies, and experimental results. Previously unavailable information on SEGR is also provided
Keywords
MOSFET; cosmic ray interactions; fault diagnosis; ion beam effects; radiation effects; semiconductor device testing; space vehicle electronics; burnout; catastrophic failure; cosmic-ray environment; degraded performance; single-event burnout; single-event gate rupture; space; test; vertical power MOSFET; Electrodes; Energy management; Insulated gate bipolar transistors; MOSFET circuits; Neck; Power semiconductor switches; Pulse power systems; Space technology; Substrates; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.490899
Filename
490899
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