Title :
Experimental studies of single-event gate rupture and burnout in vertical power MOSFETs
Author :
Titus, Jeffrey L. ; Wheatley, C. Frank
Author_Institution :
NSWC, Crane, IN, USA
fDate :
4/1/1996 12:00:00 AM
Abstract :
Numerous studies have revealed that vertical power MOSFETs are susceptible to single-event burnout (SEB) and single-event gate rupture (SEGR), resulting in degraded performance or even catastrophic failure when operated in a cosmic-ray environment like space. This paper summarizes many of those experimental studies and examines the problems, test methodologies, and experimental results. Previously unavailable information on SEGR is also provided
Keywords :
MOSFET; cosmic ray interactions; fault diagnosis; ion beam effects; radiation effects; semiconductor device testing; space vehicle electronics; burnout; catastrophic failure; cosmic-ray environment; degraded performance; single-event burnout; single-event gate rupture; space; test; vertical power MOSFET; Electrodes; Energy management; Insulated gate bipolar transistors; MOSFET circuits; Neck; Power semiconductor switches; Pulse power systems; Space technology; Substrates; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
