DocumentCode :
811899
Title :
Spintronics
Author :
Flatté, Michael E.
Author_Institution :
Dept. of Phys. & Astron., Iowa Univ., Iowa City, IA
Volume :
54
Issue :
5
fYear :
2007
fDate :
5/1/2007 12:00:00 AM
Firstpage :
907
Lastpage :
920
Abstract :
Investigations of the dynamics of spin-polarized electronic current through and near materials with spin-dependent electronic structures have created a rich new field dubbed "spintronics". The implications of spintronics research extend deep into the realm of fundamental material properties, yet spintronics applications have also revolutionized the magnetic-storage industry by providing efficient room-temperature magnetic sensors. Control of nonequilibrium spin-polarized populations of electrons through and near magnets has led to the dominance of linear (resistive) spintronic devices for magnetic readout in commercial magnetic storage. Rapid progress in understanding the fundamental physics of nonlinear spin-polarized electronic transport in metals and semiconductors suggests new applications for spintronic devices in fast nonvolatile memory as well as logic devices, with or without magnetic materials or magnetic fields. Ongoing study of the interaction between such spintronic elements and optical fields, particularly in semiconductors, promises the future development of optical spintronic devices
Keywords :
magnetic materials; magnetic storage; magnetoelectronics; spin polarised transport; spin valves; magnetic readout; magnetic storage; magnetoelectronics; nonvolatile memory; spin Hall effect; spin coherence; spin electronics; spin relaxation times; spin transistor; spin transport; spin valves; Electrons; Magnetic devices; Magnetic materials; Magnetic sensors; Magnetoelectronics; Magnets; Material properties; Nonlinear optics; Optical devices; Optical sensors; Magnetoelectronics; Rashba fields; Spin Hall effect; spin coherence; spin electronics; spin relaxation times; spin transistor; spin transport; spin valve; spintronics;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2007.894376
Filename :
4160106
Link To Document :
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