Transistor oscillator and amplifier grids

Author

Weikle, Robert M., II ; Kim, Moonil ; Hacker, Jonathan B. ; De Lisio, Michael P. ; Popovic, Zoya B. ; Rutledge, David B.

Author_Institution

California Inst. of Technol., Pasadena, CA, USA

Volume

80

Issue

11

fYear

1992

fDate

11/1/1992 12:00:00 AM

Firstpage

1800

Lastpage

1809

Abstract

Although quasi-optical techniques are applicable to a large variety of solid-state devices, special attention is given to transistors, which are attractive because they can be used as either amplifiers or oscillators. Experimental results for MESFET bar-grid and planar grid oscillators are presented. A MESFET grid amplifier that receives only vertically polarized waves at the input and radiates horizontally polarized waves at the output is discussed. These planar grids can be scaled for operation at millimeter- and submillimeter-wave frequencies. By using modern IC fabrication technology, planar grid oscillators and amplifiers containing thousands of devices can be built, thereby realizing an efficient means for large-scale power combining

Keywords

MMIC; Schottky gate field effect transistors; electromagnetic wave polarisation; field effect integrated circuits; microwave amplifiers; microwave oscillators; submillimetre wave devices; EHF; IC fabrication technology; MESFET grid amplifier; MESFET oscillators; THF; amplifier grids; bar grid oscillators; horizontally polarized waves; large-scale power combining; planar grid oscillators; planar grids; quasi-optical techniques; solid-state devices; submillimeter-wave frequencies; thousands of devices; transistor amplifier grids; transistor oscillator grids; vertically polarized waves; Fabrication; Frequency; Large-scale systems; MESFETs; Millimeter wave technology; Oscillators; Polarization; Power amplifiers; Solid state circuits; Submillimeter wave technology;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/5.175256

Filename

175256