Title :
Low-threshold InGaAs/GaAs strained-layer surface emitting lasers with two 45° angle etched total reflection mirrors
Author :
Chao, C.P. ; Merz, J.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA
fDate :
12/1/1991 12:00:00 AM
Abstract :
Summary form only given. An InGaAs/GaAs strained-layer IPSEL (in-plane surface emitting laser) structure with two 45° dry-etched mirrors and a highly reflecting bottom quarter-wavelength stack is reported. It has a record low continuous-wave (CW) threshold current at 10 mA. The laser structure consists of a conventional double-heterostructure single-quantum-well (80-Å In0.2Ga0.8As/100-Å GaAs) laser structure on top of a quarter-wave stack (25 pairs of 695-Å GaAs/830-Å AlAs), which serves as a distributed Bragg reflector (~99%) after 45° angle etching
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser accessories; mirrors; semiconductor junction lasers; sputter etching; 10 mA; 45° angle etching; CW threshold current; GaAs-AlAs; IPSEL structure; In0.2Ga0.8As-GaAs; distributed Bragg reflector; double-heterostructure single-quantum-well; dry-etched mirrors; highly reflecting bottom quarter-wavelength stack; strained-layer surface emitting lasers; total reflection mirrors; Bandwidth; Etching; Gallium arsenide; Indium gallium arsenide; Laser modes; Length measurement; Quantum well lasers; Surface emitting lasers; Threshold current; Waveguide lasers;
Journal_Title :
Electron Devices, IEEE Transactions on
