Title :
Large CW power, very-low-threshold, single transverse mode operation of vertical cavity mushroom structure surface emitting lasers
Author :
Yang, Y. Jeffrey ; Wang, Stanley C. ; Fernandez, Raul ; Wang, Shuhui
Author_Institution :
Lockheed Palo Alto Res. Lab., CA
fDate :
12/1/1991 12:00:00 AM
Abstract :
Summary form only given. Continuous-wave GaAs mushroom structure surface emitting laser (MSEL) operation at a threshold current as low as 1.6 mA, an output power >2.0 mW, and a single transverse mode up to three times threshold current is reported. The relatively large CW output power was achieved by reducing the series resistance using a selective zinc diffusion. The low threshold current and single-mode operation are attributed to good lateral current confinement in a small constricted region formed by mesa undercutting. The complete device was mounted junction-side up on a chip carrier and tested CW at room temperature. Some results are given
Keywords :
III-V semiconductors; gallium arsenide; laser modes; semiconductor device testing; semiconductor junction lasers; 1.6 mA; 2 mW; CW output power; CW testing; GaAs; GaAs:Zn; chip carrier; lateral current confinement; mesa undercutting; selective diffusion; series resistance; single transverse mode operation; threshold current; vertical cavity mushroom structure surface emitting lasers; Carrier confinement; Gallium arsenide; Laser modes; Power generation; Power lasers; Surface emitting lasers; Surface resistance; Testing; Threshold current; Zinc;
Journal_Title :
Electron Devices, IEEE Transactions on
