Strained InGaAs-GaAs quantum-well lasers by impurity-induced disordering with very low threshold and moderate blue-shift

Author

Zou, W.X. ; Merz, J.L. ; Coldren, Larry A. ; Fu, R.J. ; Hong, Choong

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA

Volume

38

Issue

12

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

2691

Lastpage

2692

Abstract

Summary form only given. The authors report on strained InGaAs-QW impurity-induced disordering (IID) lasers having self-aligned structure with very low threshold current and moderate blue-shift of the lasing wavelength. The strained InGaAs-QW material employed was grown by MOCVD. The fabrication process is described. The authors believe that IID by Si diffusion is a very attractive approach for the fabrication of strained InGaAs-QW lasers

Keywords

III-V semiconductors; gallium arsenide; indium compounds; semiconductor doping; semiconductor growth; semiconductor junction lasers; spectral line shift; vapour phase epitaxial growth; GaAs:Si; InGaAs-GaAs; MOCVD; Si diffusion; impurity-induced disordering; low threshold; moderate blue-shift; self-aligned structure; strained quantum well lasers; Distributed Bragg reflectors; Gallium arsenide; Mirrors; Power generation; Power lasers; Quantum well lasers; Sputter etching; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.158701

Filename

158701