Title :
A novel SAL-PINSCH quantum-well laser structure for a pinched beam divergence
Author :
Chen, Y.K. ; Wu, Ming C. ; Hong, M.H. ; Chin, M.A. ; Sergent, A.M.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ
fDate :
12/1/1991 12:00:00 AM
Abstract :
Summary form only given. An edge-emitting strained AlGaAs/InGaAs/GaAs quantum-well laser structure is reported. It has a periodic index separate confinement heterostructure (PINSCH) optical confinement layers for a small beam divergence and high output power. Preliminary measurements of AR/HR-coated self-aligned ridge waveguide lasers show a CW output power of up to 350 mW and a 20° transverse beam divergence at a 980-nm lasing wavelength. This low beam divergence results in a high coupling efficiency of 51% into single-mode fibers. The expanded optical field in PINSCH confinement layers significantly pinches the transverse beam divergence and increases the maximum output power
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor junction lasers; semiconductor quantum wells; 350 mW; 51 percent; 980 nm; AR/HR coated lasers; AlGaAs-InGaAs-GaAs; CW output power; PINSCH; SAL-PINSCH; edge emitting lasers; expanded optical field; fiber coupling efficiency; high coupling efficiency; high output power; lasing wavelength; low beam divergence; maximum output power; optical confinement layers; periodic index separate confinement heterostructure; pinched beam divergence; quantum-well laser structure; self-aligned ridge waveguide lasers; small beam divergence; strained laser structure; transverse beam divergence; Fiber lasers; Gallium arsenide; Indium gallium arsenide; Laser beams; Optical waveguides; Power generation; Power lasers; Power measurement; Quantum well lasers; Wavelength measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
