Title :
High-Power Tunnel-Injection 1060-nm InGaAs–(Al)GaAs Quantum-Dot Lasers
Author :
Pavelescu, Emil-Mihai ; Gilfert, C. ; Reithmaier, Johann P. ; Martín-Mínguez, A. ; Esquivias, Ignacio
Author_Institution :
Inst. of Nanostruct. Technol. & Analytics (INA), Univ. of Kassel, Kassel, Germany
fDate :
7/15/2009 12:00:00 AM
Abstract :
High-power 1060-nm InGaAs-(Al)GaAs quantum-dot (QD) laser material was developed with an integrated InGaAs quantum film acting as a tunnel injector for electrons. In comparison to a QD laser without tunnel-injection design, the new type of lasers exhibit a strongly improved temperature stability of the threshold current and internal quantum efficiency.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser beams; laser stability; optical materials; quantum dot lasers; semiconductor quantum dots; semiconductor thin films; InGaAs-AlGaAs; high-power semiconductor quantum-dot laser; integrated semiconductor quantum film; internal quantum efficiency; semiconductor laser material; temperature stability; threshold current; tunnel injector; wavelength 1060 nm; Power lasers; quantum dots (QDs); semiconductor lasers; tunneling;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2009.2021074
