Title :
Molecular beam epitaxy grown PbSnTe buried quantum-well diode lasers with PbEuSeTe confinement layers
Author :
Feit, Z. ; Kostyk, D. ; Mak, Pui-In
Author_Institution :
Laser Photonics Anal. Div., Bedford, MA
fDate :
12/1/1991 12:00:00 AM
Abstract :
Summary form only given. Buried quantum-well (BQW) lasers were fabricated in a two-stage MBE growth sequence. The first growth stage included a 1.3-μm-thick p-PbTe:Tl buffer grown on top of a p-type (100) PbTe substrate followed by a Tl-doped 0.6-μm p-Pb0.968 Eu0.032Se0.04Te0.96 cladding layer, and a Tl-doping 0.6-μm p-type Pb0.985Eu0.015 Se0.02Te0.98 confinement layer, an undoped 1000-Å p-Pb0.932Sn0.068Te active layer. In the second growth stage a Bi-doped n-type 0.6-μm Pb0.985Eu 0.015Se0.02Te0.98 confinement layer followed by a 0.6-μm Pb0.968Eu0.032Se0.04 Te0.96 cladding layer and a 0.6-μm PbTe contacting layer were grown. Ohmic contacts were formed by evaporation and Fabry-Perot cavities approximately 250 μm long were cleaved. Threshold current densities of 20 A/cm2 (20 K), 200 A/cm2 (80 K). 3.1 kA/cm2 (140 K), and 23 kA/cm2 (180 K) were measured, and a continuous wave (CW) operating temperature of 189 K was realized
Keywords :
IV-VI semiconductors; laser cavity resonators; lead compounds; molecular beam epitaxial growth; ohmic contacts; semiconductor growth; semiconductor junction lasers; semiconductor materials; tin compounds; (100) PbTe substrate; 0.6 to 1.3 micron; 1000 A; 20 to 189 K; 250 micron; CW operation; Fabry-Perot cavities; Pb0.968Eu0.032Se0.04Te0.96 ; Pb0.985Eu0.015Se0.02Te0.98 ; PbEuSeTe:Bi; PbEuSeTe:Tl; PbSnTe-PbEuSeTe; PbTe; PbTe contacting layer; PbTe:Tl buffer layer; active layer; buried quantum-well diode lasers; cladding layer; confinement layers; semiconductors; threshold current density; two-stage MBE growth sequence; Diodes; Fabry-Perot; Molecular beam epitaxial growth; Ohmic contacts; Quantum well lasers; Quantum wells; Substrates; Tellurium; Threshold current; Tin;
Journal_Title :
Electron Devices, IEEE Transactions on
