The minority-carrier injection-controlled field-effect transistor (MICFET)

Author

Ajit, J.S. ; Baliga, B. Jayant ; Tandon, S. ; Reisman, A.

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC

Volume

38

Issue

12

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

2694

Lastpage

2695

Abstract

Summary form only given. A three-terminal power field-effect transistor structure that has a switching speed close to that for the power MOSFET with 30% higher on-state current density is described. The device structure is similar to that for the power MOSFET with the addition of a floating injector region whose potential can be controlled by an integrated vertical DMOSFET. The n-channel MICFET structure was fabricated with a standard polysilicon gate DMOSFET process using 20-Ω-cm, 40-μm-thick epitaxial n-type layers grown on (0.02 Ω pd cm) n⁺ substrates. The devices had a p-base of 3 μm and an n⁺ source depth of 1 μm. The breakdown voltages of the MICFET and DMOSFET were both in excess of 500 V

Keywords

field effect transistors; power transistors; 1 micron; 3 micron; 500 V; breakdown voltages; device structure; fabrication; floating injector region; integrated vertical DMOSFET; minority-carrier injection-controlled FET; n-channel MICFET; on-state current density; operation; standard polysilicon gate DMOSFET process; switching speed; three-terminal power field-effect transistor structure; Current density; Dielectric materials; Electron devices; FETs; Germanium; Insulated gate bipolar transistors; MOSFET circuits; Temperature; Transconductance; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.158707

Filename

158707