Title :
Visible Light Emission by a Reverse-Biased Integrated Silicon Diode
Author :
Morschbach, M. ; Oehme, M. ; Kasper, E.
Author_Institution :
Inst. of Semicond. Eng., Univ. Stuttgart
fDate :
5/1/2007 12:00:00 AM
Abstract :
In this paper, the paper discussed the emission of visible light by a monolithically integrated silicon diode under reverse bias. The emission of light is achieved using a special defect-engineered buried layer. The light is emitted as punctiform sources by the defects located at the p-n junction of the reverse-biased diode. The influence of the defects on the electrical behavior is manifested as a current-dependent electroluminescence
Keywords :
buried layers; electroluminescence; light emitting diodes; p-n junctions; silicon; LED; current-dependent electroluminescence; defect-engineered buried layer; light-emitting diodes; p-n junction; reverse-biased integrated silicon diode; visible light emission; Cutoff frequency; Doping; Light emitting diodes; Molecular beam epitaxial growth; P-n junctions; Photonic band gap; Power engineering and energy; Semiconductor diodes; Silicon; Stimulated emission; Defect engineering; light-emitting diodes (LED); silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.894247
