Title :
SiGe/Si camel-barrier heterojunction internal photoemission LWIR detector
Author :
Lin, T.L. ; Ksendzov, A. ; Jones, E.W.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA
fDate :
12/1/1991 12:00:00 AM
Abstract :
Summary form only given. A SiGe/Si CHIP (camel-barrier heterojunction internal photoemission) detector has been demonstrated with electrically tailorable LWIR (long-wavelength infrared) response in addition to the static tailorability of the previously proposed HIP (heterojunction internal photoemission) detector. Photoresponses at wavelengths of 5 to 12 μm have been obtained with electrically tailorable QEs (quantum efficiencies) of 0.2-3.0% in the nonoptimized device structures. The electrical tailorability of the CHIP detector offers significant flexibility for infrared imaging applications
Keywords :
Ge-Si alloys; infrared detectors; semiconductor junctions; silicon; 0.2 to 3 percent; 5 to 12 micron; CHIP; IR detectors; LWIR detector; SiGe-Si; camel-barrier detectors; camel-barrier heterojunction internal photoemission; dynamic tailoring; electronically tailorable response; long-wavelength infrared; nonoptimized device structures; quantum efficiencies; static tailoring; wavelengths; Energy barrier; Germanium silicon alloys; Heterojunctions; Hip; Infrared detectors; Molecular beam epitaxial growth; Photoelectricity; Silicon germanium; Substrates; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
