Title :
Cosmic and terrestrial single-event radiation effects in dynamic random access memories
Author :
Massengill, Lloyd W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Vanderbilt Univ., Nashville, TN, USA
fDate :
4/1/1996 12:00:00 AM
Abstract :
A review of the literature on single-event radiation effects (SEE) on MOS integrated-circuit dynamic random access memories (DRAMs) is presented. The sources of single-event (SE) radiation particles, causes of circuit information loss, experimental observations of SE information upset, technological developments for error mitigation, and relationships of developmental trends to SE vulnerability are discussed
Keywords :
DRAM chips; MOS integrated circuits; cosmic ray interactions; fault tolerant computing; integrated circuit reliability; integrated circuit technology; ion beam effects; radiation hardening (electronics); space vehicle electronics; DRAM; MOS integrated-circuit; bit line errors; developmental trends; dynamic random access memories; error mitigation; heavy ions; information loss; information upset; ionising radiation; protons; radiation particles; terrestrial single-event radiation effects; tolerance; vulnerability; Alpha particles; Computer errors; DRAM chips; Electronic circuits; Error correction; Ionizing radiation; Radiation effects; Random access memory; Single event upset; Space technology;
Journal_Title :
Nuclear Science, IEEE Transactions on
