All electrical laser diode characterization by monolithic integration with a photodiode

Author

Chu, A. ; Gigase, Y. ; Van Zeghbroeck, B.

Author_Institution

Colorado Univ., Boulder, CO

Volume

38

Issue

12

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

2700

Abstract

Summary form only given. The combination of a laser diode integrated on top of a photodiode has been shown to be of interest as an electronic device for optoelectronic circuits (the photon transport transistor) and for reducing the power dissipation of a laser at thresholds up to 42% through photon recycling. The added photodiode also proves to be a powerful analysis tool for determining laser parameters, characterizing mirror processing, and studying laser diode degradation. Without a single optical measurement one can determine the laser threshold current, the nonradiative lifetime of the carriers, and the differential quantum efficiency. Early degradation of the laser diode was also studied by monitoring the light absorbed in the photodiode

Keywords

integrated optoelectronics; laser variables measurement; photodiodes; semiconductor junction lasers; added photodiode; all electrical laser diode characterisation; differential quantum efficiency; early degradation of laser diode; laser threshold current; monolithic integration with photodiode; optoelectronic circuits; photon recycling; photon transport transistor; Circuits; Current measurement; Degradation; Diode lasers; Mirrors; Photodiodes; Power dissipation; Power lasers; Recycling; Threshold current;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.158718

Filename

158718