• DocumentCode
    81222
  • Title

    RF Characteristic Analysis Model Extraction on the Stacked Metal–Insulator–Metal Capacitors for Radio Frequency Applications

  • Author

    Woo Suk Sul ; Sung Gyu Pyo

  • Author_Institution
    Nat. NanoFab Center, Daejeon, South Korea
  • Volume
    61
  • Issue
    8
  • fYear
    2014
  • fDate
    Aug. 2014
  • Firstpage
    3011
  • Lastpage
    3013
  • Abstract
    This brief aimed to report study results of radio frequency integrated circuit applicability through RF characteristic analysis model extraction on the stacked metal-insulator- metal (MIM) capacitor. We used analysis method enhancing capacitance density per unit area via a parallel connection of two MIM capacitors vertically. The total capacitance of the stacked MIM capacitor was 2.05 fF/μm2 and leakage current and breakdown voltage were 0.004 fA/μm2 and more than 50 V, respectively. Moreover, VCC1 showed a value less than 40 ppm/V, while VCC2 showed a value less than 20 ppm/V2. Temperature coefficient of capacitance exhibited values less than 80 ppm/°C for every 25 °C increase between 25 °C and 125 °C. A specialized equivalent circuit with the parallel connection of MIM capacitance (CMIM1, CMIM2) was proposed for the stacked MIM capacitor. When extracted model parameter components were simulated, high accuracy was exhibited despite increased frequency by applying various parasitic components to the extraction.
  • Keywords
    MIM devices; capacitors; equivalent circuits; leakage currents; radiofrequency integrated circuits; RF characteristic analysis model extraction; breakdown voltage; equivalent circuit; leakage current; radiofrequency integrated circuit; stacked MIM capacitor; stacked metal-insulator-metal capacitors; temperature 25 degC to 125 degC; temperature coefficient of capacitance; Capacitance; Capacitors; Equivalent circuits; Integrated circuit modeling; MIM capacitors; Metals; Radio frequency; Breakdown voltage; leakage current; model extraction; radio frequency; stacked metal-insulator-metal (MIM) capacitor.; stacked metal??insulator??metal (MIM) capacitor;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2014.2330842
  • Filename
    6849449