Characteristics of InAlAs/InGaAsP quantum-well HEMTs

Author

Hong, Woo-Pyo ; Bhat, Ritesh ; Hayes, J.R. ; Chang, G.K. ; Nguyen, Cam ; Koza, M.

Author_Institution

Bellcore, Red Bank, NJ

Volume

38

Issue

12

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

2701

Lastpage

2702

Abstract

Summary form only given. An investigation of the DC and RF characteristics of InAlAs/InGaAsP quantum-well channel HEMTs is discussed. The InAlAs/In_xGa_1-xAs_yP_1-y quantum-well HEMT structures lattice matched to InP (y=2.2 (1- x)) were grown by low-pressure OMCVD. The experimental data show that InAlAs/InGaAsP quaternary quantum-well channel HEMTs have significant potential for high-speed, high-voltage gain, and high-power applications

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; semiconductor quantum wells; solid-state microwave devices; vapour phase epitaxial growth; DC characteristics; HEMTs; InAlAs-In_xGa_1-xAs_yP_1-y; RF characteristics; experimental data; high-power applications; high-speed; high-voltage gain; low-pressure OMCVD; microwave devices; quantum-well channel; semiconductors; Electric breakdown; Fabrication; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Photonic band gap; Quantum well devices; Quantum wells;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.158720

Filename

158720