DocumentCode
812266
Title
InP-based inverted high electron mobility transistors
Author
Schmitz, A.E. ; Nguyen, L.D. ; Brown, A.S. ; Metzger, R.A.
Author_Institution
Hughes Res. Lab., Malibu, CA
Volume
38
Issue
12
fYear
1991
fDate
12/1/1991 12:00:00 AM
Firstpage
2702
Abstract
Summary form only given. The fabrication and characterisation of an inverted high-electron-mobility transistor (HEMT) in the AlInAs/GaInAs-on-InP material system are reported. Inverted HEMTs, which have the donor layer beneath the channel, have the potential for higher transconductance, current gain cutoff frequency, and power gain cutoff frequency than conventional HEMTs because the gate can be placed closer to the two-dimensional electron gas (2DEG)
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; AlInAs-GaInAs; InP substrate; characterisation; current gain cutoff frequency; donor layer beneath channel; fabrication; inverted HEMTs; microwave devices; power gain cutoff frequency; semiconductors; transconductance; Electron devices; Gallium arsenide; HEMTs; MODFETs;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.158723
Filename
158723
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