Title :
Enhancement of mobility in pseudomorphic FETs with up and down monolayers
Author :
Goronkin, H. ; Tehrani, S. ; Droopad, Ravi ; Maracas, G.N. ; Shen, Jianbing
Author_Institution :
Motorola Inc., Tempe, AZ
fDate :
12/1/1991 12:00:00 AM
Abstract :
Summary form only given. A comparison was made between three pseudomorphic FET channels. The control sample was a strained In0.15Ga0.85As quantum well bounded by undoped Al 0.3Ga0.7As and GaAs with a 50-Å Al0.3 Ga0.7As spacer and 5×1012 Si planar doping. The second structure was identical to the first except one GaAs monolayer was replaced with one down monolayer. The third quantum well had one InAs down monolayer and two AlAs up monolayers positioned to increase the intersubband energy between the ground state and the next two states. The mobility was measured as a function of temperature from about 40 to 340 K for these structures. Some results are discussed
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor quantum wells; 40 to 340 K; 50 A; AlAs up monolayers; In0.15Ga0.85As quantum well; InAs down monolayer; InGaAs-AlGaAs; InGaAs-GaAs; mobility enhancement; monolayer quantum barriers; monolayer quantum wells; pseudomorphic FET channels; semiconductors; Electrons; Energy states; FETs; Gallium arsenide; Indium compounds; Indium gallium arsenide; Laboratories; Photonic band gap; Stationary state; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
