Title :
Performance improvement of 1.52 μm (Ga,In)(N,As)/GaAs quantum well lasers on GaAs substrates
Author :
Hugues, M. ; Damilano, B. ; Barjon, J. ; Duboz, J.-Y. ; Massies, J. ; Ulloa, J.-M. ; Montes, M. ; Hierro, A.
Author_Institution :
Centre Nat. de la Recherche Scientifique, Sophia Antipolis, France
fDate :
5/12/2005 12:00:00 AM
Abstract :
(Ga,In)(N,As)/GaAs single quantum well lasers have been grown by molecular beam epitaxy. Room temperature pulsed operation at a wavelength of 1515 nm is achieved. As-cleaved 1000 μm-long lasers have a threshold current density of 4.06 kA/cm2 and a slope efficiency of 0.075 W/A per facet.
Keywords :
III-V semiconductors; current density; gallium compounds; indium compounds; molecular beam epitaxial growth; quantum well lasers; 1.52 micron; 1515 nm; GaAs substrates; GaInNAs-GaAs; molecular beam epitaxy; quantum well lasers; room temperature pulsed operation; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20050487
