Title :
Transferred substrate Schottky-collector heterojunction bipolar transistors: first results and scaling laws for high fmax
Author :
Bhattacharya, U. ; Mondry, M.J. ; Hurtz, G. ; Tan, I.-H. ; Pullela, R. ; Reddy, M. ; Guthrie, J. ; Rodwell, M.J.W. ; Bowers, J.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
Unlike normal heterojunction bipolar transistors (HBT´s), transferred substrate Schottky-collector HBT´s (SCHBT´s) exhibit substantial increases in fmax as the emitter and collector stripes are scaled to deep submicron dimensions. First generation InAlAs/InGaAs SCHBT´s with aligned 1-μm emitter and collector stripes have been fabricated.
Keywords :
III-V semiconductors; Schottky barriers; aluminium compounds; flip-chip devices; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor technology; 1 micron; InAlAs-InGaAs; SCHBT; collector stripes; deep submicron dimensions; emitter stripes; scaling laws; transferred substrate Schottky-collector HBTs; Analog-digital conversion; Bandwidth; Bipolar transistors; Capacitance; Cutoff frequency; Electrons; Flip chip; Heterojunction bipolar transistors; Substrates; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
