• DocumentCode
    812338
  • Title

    Delta-doped SAGM avalanche photodiodes

  • Author

    Kuchibhotla, R. ; Campbell, Joe C. ; Tsai, Chia-Yin ; Tsang, W.T.

  • Author_Institution
    Microelectron. Res. Center, Texas Univ., Austin, TX
  • Volume
    38
  • Issue
    12
  • fYear
    1991
  • fDate
    12/1/1991 12:00:00 AM
  • Firstpage
    2705
  • Lastpage
    2706
  • Abstract
    Summary form only given. The fabrication of a delta-doped SAGM-APD is reported. The multiplication region is only 0.3 μm thick. A gain-bandwidth product of 75 GHz has been achieved. Using a top-surface reflector, quantum efficiencies of over 70% have been obtained even though the absorption layer is only 1.1 μm thick
  • Keywords
    avalanche photodiodes; semiconductor doping; 70 percent; APD; SAGM; absorption layer; avalanche photodiodes; delta-doped; fabrication; multiplication region; quantum efficiencies; separate absorption/grading/multiplication; top-surface reflector; Avalanche photodiodes; Capacitance; Doping; Indium gallium arsenide; Jacobian matrices; Molecular beam epitaxial growth; Packaging; Poisson equations; Resonance; Robustness;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.158729
  • Filename
    158729
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=812338