Title :
Blue-green laser diodes made from II-VI semiconductors
Author :
Haase, M.A. ; Qiu, Jian ; DePuydt, J.M. ; Cheng, Hao-Chien
Author_Institution :
3M Co., St. Paul, MN
fDate :
12/1/1991 12:00:00 AM
Abstract :
Summary form only given. Laser diodes fabricated from II-VI semiconductors are discussed. These devices emit coherent light at a wavelength of 490 nm from a ZnSe-based single-quantum-well structure under pulsed current injection at 77 K. The device structure consists of a Cd0.2Zn0.8Se single quantum well in a ZnSe-ZnS 0.07Se0.93 waveguide, grown by MBE on a (100) GaAs:Si substrate. Doping of the epilayers was accomplished with Cl donors from a ZnCl2 source and N acceptors from an RF plasma source
Keywords :
II-VI semiconductors; cadmium compounds; laser transitions; optical waveguides; semiconductor junction lasers; zinc compounds; (100) substrate; 490 nm; 77 K; Cd0.2Zn0.8Se:Cl-ZnSe-ZnS0.07Se 0.93-GaAs:Si; Cl donors; GaAs:Si substrate; II-VI semiconductors; MBE; N acceptors; RF plasma source; ZnCl2 source; ZnSe-ZnS0.07Se0.93 waveguide; blue-green emission; coherent light; epilayer doping; laser diodes; pulsed current injection; semiconductor lasers; single-quantum-well structure; Diode lasers; Etching; HEMTs; Human computer interaction; Indium phosphide; MODFETs; Optical pulse generation; Process control; Quantum well lasers; Semiconductor waveguides;
Journal_Title :
Electron Devices, IEEE Transactions on
