DocumentCode :
812409
Title :
Comparison between carried-induced optical index, loss variations and carrier lifetime in GaInAsP/InP heterostructures for 1.55 μm DOS application
Author :
Zegaoui, M. ; Decoster, D. ; Harari, J. ; Vilcot, J.P. ; Mollot, F. ; Magnin, V. ; Chazelas, J.
Author_Institution :
Inst. d´´Electronique, Univ. des Sci. et Technol. de Lille, Villeneuve d´´Ascq, France
Volume :
41
Issue :
10
fYear :
2005
fDate :
5/12/2005 12:00:00 AM
Firstpage :
613
Lastpage :
614
Abstract :
Experimentally carrier-induced optical index, propagation excess loss and carrier lifetime variations against injected current in n+-InP/i-InGaAsP/i-InP/p+-InP heterostructures are investigated. The heterostructures have quaternary bandgap composition of λg=1.18 and 1.30 μm, and they were specially designed for 1.55 μm wavelength digital optical switch (DOS) applications. The Q1.30 based heterostructure shows the best potential for high-performance DOS.
Keywords :
III-V semiconductors; arsenic compounds; carrier lifetime; energy gap; gallium compounds; indium compounds; integrated optics; optical switches; 1.55 micron; DOS application; GaInAsP-InP; carrier lifetime; carrier-induced optical index; digital optical switch; injected current; loss variations; propagation excess loss; quaternary bandgap composition;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20050770
Filename :
1432550
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=812409
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