Title :
Long-wavelength (10-μm) infrared detector using Si1-xGex/Simultiple quantum wells
Author :
Karunasiri, R.P.G. ; Park, Joon S. ; Wang, K.L.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA
fDate :
12/1/1991 12:00:00 AM
Abstract :
Summary form only given. The demonstration of a Si1-xGe x/Si multiquantum-well infrared detector is reported. The quantum-well structure consists of 50 periods of 30-Å-thick Si0.85Ge0.15 wells (doped p=1×1019 cm-3) separated by 300-Å-thick undoped Si barriers with p+ ohmic contacts on both sides. The quantum well is designed so that only the ground state is confined in the quantum well. The feasibility of Si-based highly sensitive long-wavelength infrared detectors with the advantage of monolithic integration with Si integrated circuits was demonstrated
Keywords :
Ge-Si alloys; elemental semiconductors; infrared detectors; integrated optoelectronics; semiconductor materials; semiconductor quantum wells; silicon; 10 micron; IR detector; MQW; Si0.85Ge0.15-Si; infrared detector; long-wavelength; monolithic integration; multiple quantum wells; p+ ohmic contacts; undoped Si barriers; Diode lasers; Etching; HEMTs; Human computer interaction; Indium phosphide; Infrared detectors; MODFETs; Optical pulse generation; Process control; Quantum well lasers;
Journal_Title :
Electron Devices, IEEE Transactions on
