DocumentCode
812440
Title
Observation of field-induced refractive index variation in quantum box structure
Author
Aizawa, Takehiro ; Shimomura, Kazuya ; Arai, Shigehisa ; Suematsu, Yasuharu
Author_Institution
Dept. of Phys. Electron., Tokyo Inst. of Technol.
Volume
38
Issue
12
fYear
1991
fDate
12/1/1991 12:00:00 AM
Firstpage
2709
Abstract
Summary form only given. The authors report the observation of refractive index variation in a GaInAs-InP quantum box structure. They also measured the wavelength dependence of the refractive index variation to confirm the quantum box effect. The fabrication process for the quantum box structure is discussed. The field-induced refractive index variation of the quantum box structure was measured using a Mach-Zehnder interferometer
Keywords
III-V semiconductors; electro-optical effects; gallium arsenide; indium compounds; refractive index; semiconductor quantum dots; GaInAs-InP; Mach-Zehnder interferometer; fabrication process; field-induced refractive index variation; quantum box structure; wavelength dependence; Degradation; Dry etching; FETs; Optical films; Optical refraction; Optical variables control; Refractive index; Wavelength measurement; Wet etching; Wire;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.158738
Filename
158738
Link To Document