Title :
Improved device performance and reliability of n-channel and p-channel MOSFETs with ultrathin gate oxides prepared by conventional furnace oxidation of Si in pure N2O ambient
Author :
Lo, G.Q. ; Ting, Wei-Yuan ; Ahn, Jeongseob ; Kwong, D.L.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX
fDate :
12/1/1991 12:00:00 AM
Abstract :
Summary form only given. Ultrathin gate oxides prepared by rapid thermal oxidation of Si in pure N2O exhibit superior resistance to dopant penetration and electrical stressing as compared to pure SiO2. The improved performance and excellent reliability (on- and off-state) of both n- and p-MOSFETs with ultrathin (~60-Å) gate oxides were prepared by conventional furnace oxidation of Si in N2O. The results suggest that the N2 O oxide is a promising candidate for ultrathin gate dielectric technology for CMOS ULSI applications
Keywords :
elemental semiconductors; insulated gate field effect transistors; oxidation; reliability; silicon; 60 Å; CMOS ULSI applications; MOSFET; Si-SiNO; device performance; furnace oxidation; n-channel; p-channel; pure N2O ambient; rapid thermal oxidation; reliability; ultrathin gate dielectric technology; ultrathin gate oxides; CMOS technology; Capacitance-voltage characteristics; Compressive stress; Electron traps; MOS capacitors; MOSFETs; Oxidation; Substrates; Tensile stress; Thermal stresses;
Journal_Title :
Electron Devices, IEEE Transactions on
