Title :
Endurance of MOSFETs with rapid thermally reoxidized nitrided thin gate oxides to hot carrier-induced GIDL
Author :
Joshi, A.B. ; Kwong, D.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX
fDate :
12/1/1991 12:00:00 AM
Abstract :
Summary form only given. The authors report a complete investigation of the off-state degradation in MOSFETs with rapid thermally nitrided (RTN) and rapid thermally reoxidized nitrided (RTN/RTO) MOSFETs. It is demonstrated that RTN/RTO MOSFETs show the least ΔId for low Vd (5 V), which makes it a promising replacement for pure oxide, especially in the future reduced power supply operations. The impact of RTN and subsequent RTO on the stress-induced gate-induced drain leakage (GIDL) in MOSFETs was also investigated. RTN/RTO samples were found to show the least ΔId under low Vd
Keywords :
hot carriers; insulated gate field effect transistors; leakage currents; 5 V; MOSFETs; endurance; gate-induced drain leakage; hot carrier induced leakage; nitrided thin gate oxides; off-state degradation; rapid thermally reoxidized nitrided; Artificial intelligence; Charge pumps; Electron traps; Interface states; MOSFETs; Power supplies; Rapid thermal processing; Thermal degradation; Thermal stresses; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
