Endurance of MOSFETs with rapid thermally reoxidized nitrided thin gate oxides to hot carrier-induced GIDL

Author

Joshi, A.B. ; Kwong, D.L.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX

Volume

38

Issue

12

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

2711

Lastpage

2712

Abstract

Summary form only given. The authors report a complete investigation of the off-state degradation in MOSFETs with rapid thermally nitrided (RTN) and rapid thermally reoxidized nitrided (RTN/RTO) MOSFETs. It is demonstrated that RTN/RTO MOSFETs show the least ΔI_d for low V_d (5 V), which makes it a promising replacement for pure oxide, especially in the future reduced power supply operations. The impact of RTN and subsequent RTO on the stress-induced gate-induced drain leakage (GIDL) in MOSFETs was also investigated. RTN/RTO samples were found to show the least ΔI_d under low V_d

Keywords

hot carriers; insulated gate field effect transistors; leakage currents; 5 V; MOSFETs; endurance; gate-induced drain leakage; hot carrier induced leakage; nitrided thin gate oxides; off-state degradation; rapid thermally reoxidized nitrided; Artificial intelligence; Charge pumps; Electron traps; Interface states; MOSFETs; Power supplies; Rapid thermal processing; Thermal degradation; Thermal stresses; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.158740

Filename

158740