Title :
Electrical and reliability characteristics of submicrometer nMOSFETs with oxynitride gate dielectric prepared by rapid thermal oxidation in N2O
Author :
Hwang, Han-jeong ; Ting, Wei-Yuan ; Kwong, D.-L. ; Lee, Jeyull
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX
fDate :
12/1/1991 12:00:00 AM
Abstract :
Summary form only given. The authors report on the electrical and reliability characteristics of submicrometer nMOSFETs with oxynitride gate dielectric grown in N2O. Compared with conventional rapid thermally grown oxide, oxynitride samples show significantly less degradation under hot-electron stress. According to lifetime calculation, oxynitride devices exhibit lifetimes approximately one order of magnitude longer than that of the control oxide
Keywords :
MOS integrated circuits; carrier mobility; hot carriers; insulated gate field effect transistors; oxidation; reliability; N2O; NMOSFET; Si-SiNO; electrical characteristics; hot-electron stress; lifetime calculation; n-channel MOSFET; oxynitride gate dielectric; rapid thermal oxidation; reliability characteristics; submicron devices; Artificial intelligence; Dielectric devices; Electron traps; Interface states; Lead compounds; MOSFETs; Thermal degradation; Thermal stresses; Tunneling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
