• DocumentCode
    812483
  • Title

    Electrical and reliability characteristics of submicrometer nMOSFETs with oxynitride gate dielectric prepared by rapid thermal oxidation in N2O

  • Author

    Hwang, Han-jeong ; Ting, Wei-Yuan ; Kwong, D.-L. ; Lee, Jeyull

  • Author_Institution
    Microelectron. Res. Center, Texas Univ., Austin, TX
  • Volume
    38
  • Issue
    12
  • fYear
    1991
  • fDate
    12/1/1991 12:00:00 AM
  • Firstpage
    2712
  • Lastpage
    2713
  • Abstract
    Summary form only given. The authors report on the electrical and reliability characteristics of submicrometer nMOSFETs with oxynitride gate dielectric grown in N2O. Compared with conventional rapid thermally grown oxide, oxynitride samples show significantly less degradation under hot-electron stress. According to lifetime calculation, oxynitride devices exhibit lifetimes approximately one order of magnitude longer than that of the control oxide
  • Keywords
    MOS integrated circuits; carrier mobility; hot carriers; insulated gate field effect transistors; oxidation; reliability; N2O; NMOSFET; Si-SiNO; electrical characteristics; hot-electron stress; lifetime calculation; n-channel MOSFET; oxynitride gate dielectric; rapid thermal oxidation; reliability characteristics; submicron devices; Artificial intelligence; Dielectric devices; Electron traps; Interface states; Lead compounds; MOSFETs; Thermal degradation; Thermal stresses; Tunneling; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.158742
  • Filename
    158742
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=812483