10 Gb/s monolithic integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver

Author

Hurm, V. ; Rosenzweig, J. ; Ludwig, Michael ; Benz, W. ; Osorio, R. ; Berroth, Manfred ; Hulsmann, A. ; Kaufel, G. ; Kohler, Klaus ; Raynor, B. ; Schneider, Jurgen

Author_Institution

Fraunhofer-Inst. fuer Angewandte Festkorperphys., Freiburg

Volume

38

Issue

12

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

2713

Abstract

Summary form only given. A photoreceiver based on a metal-semiconductor-metal (MSM) photodiode and AlGaAs/GaAs HEMTs is presented. The photoreceiver was fabricated using a 0.5-μm recessed-gate process for double delta-doped quantum-well HEMTs. The following mean values for the enhancement and depletion HEMT parameters, respectively, have been obtained: threshold voltages of 0.1 and -0.5 V, transconductances of 500 and 390 mS/mm, source resistances of 0.7 and 0.6 Ω-mm, and transit frequencies of 35 and 30 GHz. This process includes photodiodes. A deep wet etch was used to deposit the photodiodes on an undoped GaAs buffer layer

Keywords

III-V semiconductors; aluminium compounds; digital communication systems; gallium arsenide; high electron mobility transistors; integrated optoelectronics; optical communication equipment; photodetectors; photodiodes; receivers; 0.5 micron; 10 Gbit/s; 30 GHz; 35 GHz; AlGaAs-GaAs; HEMT; MSM-photodiode; deep wet etch; double delta-doped quantum-well; metal-semiconductor-metal; monolithic integrated receiver; optoelectronic receiver; photoreceiver; recessed-gate process; threshold voltages; transconductances; transit frequencies; undoped GaAs buffer layer; Bandwidth; Bit error rate; Circuits; Detectors; Heterojunction bipolar transistors; Photodetectors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.158744

Filename

158744