DocumentCode :
812522
Title :
Ultra-compact monolithic integration of polarization diversity waveguide photodiodes
Author :
Deri, R.J. ; Hawkins, R.J. ; Caneau, Catherine
Author_Institution :
Bellcore, Red Bank, NJ
Volume :
38
Issue :
12
fYear :
1991
fDate :
12/1/1991 12:00:00 AM
Firstpage :
2714
Lastpage :
2715
Abstract :
Summary form only given. A description is given of a device which consists of an input rib waveguide, a vertically defined coupler, a vertically coupled mesa p-i-n photodiode (PD), a second coupler, and a second PD, all serially connected. A gold cover on the first coupler ensures that only TE-polarized light is coupled into the first PD; the second coupler/PD pair collects the remaining TM light. Component lengths are 79 and 54 μm for couplers and 21 and 31 μm for PDs, for ~200-μm total detector length. The device consists of p-InGaAsP/i-InGaAs/n-InGaAsP PD layers above semi-insulating coupler layers (two GaAsP:Fe guides, InP:Fe cladding). The vertically integrated coupler/detectors are more than an order of magnitude smaller than conventional couplers, and of comparable size to electronic components (e.g. FET gate widths)
Keywords :
integrated optoelectronics; light polarisation; optical couplers; optical waveguides; photodetectors; photodiodes; 21 to 79 micron; Au cover; GaAsP:Fe; InGaAsP-InGaAs; InP:Fe cladding; OEIC; TE-polarized light; input rib waveguide; mesa p-i-n photodiode; monolithic integration; polarization diversity; semi-insulating coupler layers; ultracompact design; vertically defined coupler; waveguide photodiodes; Couplers; Doping; Monolithic integrated circuits; Optical feedback; Optical polarization; Optical receivers; Optical signal processing; Optical waveguides; Optoelectronic devices; Photodiodes;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.158746
Filename :
158746
Link To Document :
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