• DocumentCode
    812549
  • Title

    GaAs MESFET With a High-Mobility Self-Assembled Planar Nanowire Channel

  • Author

    Fortuna, Seth A. ; Li, Xiuling

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL
  • Volume
    30
  • Issue
    6
  • fYear
    2009
  • fDate
    6/1/2009 12:00:00 AM
  • Firstpage
    593
  • Lastpage
    595
  • Abstract
    We demonstrate the first metal-semiconductor field-effect transistor with a self-assembled planar lang110rang GaAs nanowire channel. Well-defined dc output and transfer characteristics have been observed with a subthreshold slope of ~150 mV/dec, maximum gm of 23 mS/mm, and excellent on-current saturation. Bulklike mobility of ~4100 cm2/Vmiddots with corresponding electron concentration of 2.3middot1017 cm-3 is derived by fitting the experimental data using a self-consistent long channel field effect device model.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; electron mobility; gallium arsenide; nanowires; self-assembly; GaAs; MESFET; electron mobility; field effect device model; high-mobility self-assembled planar nanowire channel; metal-semiconductor field-effect transistor; Charge carrier mobility; field-effect transistors (FETs); nanotechnology; semiconductor materials;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2019769
  • Filename
    4909050
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=812549