DocumentCode :
812549
Title :
GaAs MESFET With a High-Mobility Self-Assembled Planar Nanowire Channel
Author :
Fortuna, Seth A. ; Li, Xiuling
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL
Volume :
30
Issue :
6
fYear :
2009
fDate :
6/1/2009 12:00:00 AM
Firstpage :
593
Lastpage :
595
Abstract :
We demonstrate the first metal-semiconductor field-effect transistor with a self-assembled planar lang110rang GaAs nanowire channel. Well-defined dc output and transfer characteristics have been observed with a subthreshold slope of ~150 mV/dec, maximum gm of 23 mS/mm, and excellent on-current saturation. Bulklike mobility of ~4100 cm2/Vmiddots with corresponding electron concentration of 2.3middot1017 cm-3 is derived by fitting the experimental data using a self-consistent long channel field effect device model.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electron mobility; gallium arsenide; nanowires; self-assembly; GaAs; MESFET; electron mobility; field effect device model; high-mobility self-assembled planar nanowire channel; metal-semiconductor field-effect transistor; Charge carrier mobility; field-effect transistors (FETs); nanotechnology; semiconductor materials;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2019769
Filename :
4909050
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=812549
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