• DocumentCode
    812551
  • Title

    Avalanche electron emitter arrays using Si ultra-shallow p-n junctions

  • Author

    Lu, Yang ; Zhu, Dalong ; Lalevic, B.

  • Volume
    38
  • Issue
    12
  • fYear
    1991
  • fDate
    12/1/1991 12:00:00 AM
  • Firstpage
    2716
  • Abstract
    Summary form only given. A silicon avalanche electron emitter array was fabricated using ultrashallow p-n junctions biased in the avalanche region. The devices were fabricated on a p- epilayer grown on p+ substrates. The most promising applications include flat panel displays with high current density and brightness; an electron source for scientific instrumentation; and an electron source in microwave applications, which requires a long and thin rectilinear electron beam
  • Keywords
    cathodes; electron field emission; elemental semiconductors; p-n junctions; silicon; vacuum microelectronics; Si; avalanche electron emitter array; cold cathodes; electron source; flat panel displays; p+ substrates; p- epilayer; thin rectilinear electron beam; ultra-shallow p-n junctions; ultrashallow junctions; Brightness; Current density; Electron beams; Electron guns; Electron sources; Flat panel displays; Instruments; Microwave devices; P-n junctions; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.158749
  • Filename
    158749
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=812551