DocumentCode
812585
Title
RF response of high RF-Tc SNS Josephson microbridges suitable for integrated circuit applications
Author
Ono, R.H. ; Beall, J.A. ; Cromar, M.W. ; Harvey, Todd E. ; Johansson, Morgan E. ; Reintsema, Carl D.
Author_Institution
Nat. Inst. of Stand. & Technol., Boulder, CO
Volume
38
Issue
12
fYear
1991
fDate
12/1/1991 12:00:00 AM
Firstpage
2717
Abstract
Summary form only given. A simple process has been developed for microfabricating high transition temperature superconductor-normal-metal-superconductor (SNS) Josephson devices that operate up to 80 K and are reasonably ideal at 43 K. Bridge resistances greater than 10 Ω and critical-current-normal-state resistance ( I cR N) products greater than 1 mV have been achieved. Clearly defined RF steps have been observed, with power dependence qualitatively similar to theoretical predictions. The fabrication process and the device characteristics are suitable for superconducting integrated circuit applications such as millimeter-wave Josephson oscillators, parametric amplifiers, and single-flux quantum digital logic
Keywords
Josephson effect; high-temperature superconductors; superconducting integrated circuits; superconducting junction devices; 43 K; 80 K; IC applications; RF response; SNS Josephson microbridges; device characteristics; fabrication process; high transition temperature; microfabricating; power dependence; superconducting integrated circuit; superconductor-normal-metal-superconductor; Bridge circuits; Fabrication; High temperature superconductors; Millimeter wave integrated circuits; Oscillators; Radio frequency; Radiofrequency amplifiers; Superconducting devices; Superconducting integrated circuits; Superconducting transition temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.158752
Filename
158752
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