Molecular beam epitaxial GaAs/Al0.2Ga0.8As heterojunction bipolar transistor on (311)A GaAs substrate

Summary form only given. The authors have investigated the characteristics and reliability of p-doping in GaAs with Si by MBE and have realized high-gain n-p-n GaAs/AlGaAs heterojunction bipolar transistors (HBTs) on (311)A GaAs substrates by all-silicon doping. Transistors made of the heterostructure having 30×35 μm² emitter regions show common emitter current gains of 80-100 at room temperature. The gain is very uniform as the current level increases, indicating that the base recombination is very small. The emitter-base junction exhibits excellent current-voltage characteristics with sharp forward turn-on and very small reverse leakage current (6 nA at -5 V)