Title :
Molecular beam epitaxial GaAs/Al0.2Ga0.8As heterojunction bipolar transistor on (311)A GaAs substrate
Author :
Li, W.Q. ; Bhattacharya, P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
12/1/1991 12:00:00 AM
Abstract :
Summary form only given. The authors have investigated the characteristics and reliability of p-doping in GaAs with Si by MBE and have realized high-gain n-p-n GaAs/AlGaAs heterojunction bipolar transistors (HBTs) on (311)A GaAs substrates by all-silicon doping. Transistors made of the heterostructure having 30×35 μm2 emitter regions show common emitter current gains of 80-100 at room temperature. The gain is very uniform as the current level increases, indicating that the base recombination is very small. The emitter-base junction exhibits excellent current-voltage characteristics with sharp forward turn-on and very small reverse leakage current (6 nA at -5 V)
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; leakage currents; molecular beam epitaxial growth; reliability; semiconductor doping; silicon; (311)A substrate; 6 nA; Al0.2Ga0.8As-GaAs:Si; GaAs substrate; MBE; current-voltage characteristics; emitter-base junction; heterojunction bipolar transistor; high-gain; n-p-n HBT; p-doping; reliability; reverse leakage current; Capacitance-voltage characteristics; Doping; Electron beams; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Silicon; Spontaneous emission; Substrates; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
