Title :
36-GHz static digital frequency dividers in AlInAs-GaInAs HBT technology
Author :
Jensen, J.F. ; Stanchina, William E. ; Metzger, R.A. ; Liu, Tiegen ; Kargodorian, T.V. ; Pierce, M.W.
Author_Institution :
Hughes Res. Lab., Malibu, CA
fDate :
12/1/1991 12:00:00 AM
Abstract :
Summary form only given. Static divide-by-four circuits have been fabricated that operate up to 36 GHz using AlInAs-GaInAs heterojunction bipolar transistor (HBT) IC technology processing an ft and fmax of 110 and 73 GHz, respectively. The transistors used consisted of an abrupt emitter-base junction design which incorporated a low-temperature p-GaInAs spacer as part of the base to inhibit beryllium diffusion. The AlInAs-GaInAs HBT device layers were grown lattice-matched to semi-insulating InP substrates by solid-source molecular beam epitaxy (MBE)
Keywords :
III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; digital integrated circuits; frequency dividers; gallium arsenide; heterojunction bipolar transistors; indium compounds; 36 GHz; AlInAs-GaInAs; HBT technology; IC technology; InP substrates; abrupt emitter-base junction; divide-by-four circuits; heterojunction bipolar transistor; low-temperature p-GaInAs spacer; molecular beam epitaxy; semiinsulating InP substrate; solid source MBE; static digital frequency dividers; Contact resistance; Electrical resistance measurement; Frequency conversion; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Silicon; Space technology; Temperature measurement; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
