Title :
Radiotracer Measurements of Sputtered Contamination Incurred during Ion Implantation Processing
Author_Institution :
IBM System Products Division, East Fishkill Facility Hopewell Junction, New York 12533
fDate :
6/1/1973 12:00:00 AM
Abstract :
Radioactive tracer measurements have been performed in order to establish limits for the degree of sputtered contamination to be expected during implantation processing in stainless steel target chambers. The information collected provides a useful set of working curves for the particular wafer-holding arrangement employed, and is presented in a form that should be convenient for use in the design of other stainless steel target-holder geometries.
Keywords :
Contamination; Geometry; Impurities; Ion beams; Ion implantation; Pollution measurement; Radioactive materials; Silicon; Sputtering; Steel;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1973.4327318