DocumentCode :
812633
Title :
Radiotracer Measurements of Sputtered Contamination Incurred during Ion Implantation Processing
Author :
Masters, B.J.
Author_Institution :
IBM System Products Division, East Fishkill Facility Hopewell Junction, New York 12533
Volume :
20
Issue :
3
fYear :
1973
fDate :
6/1/1973 12:00:00 AM
Firstpage :
1032
Lastpage :
1034
Abstract :
Radioactive tracer measurements have been performed in order to establish limits for the degree of sputtered contamination to be expected during implantation processing in stainless steel target chambers. The information collected provides a useful set of working curves for the particular wafer-holding arrangement employed, and is presented in a form that should be convenient for use in the design of other stainless steel target-holder geometries.
Keywords :
Contamination; Geometry; Impurities; Ion beams; Ion implantation; Pollution measurement; Radioactive materials; Silicon; Sputtering; Steel;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1973.4327318
Filename :
4327318
Link To Document :
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