Title :
Novel heterojunction real-space transfer logic transistor structures: a model-based investigation
Author :
Tian, Hong ; Kim, Ki Wook ; Littlejohn, Michael A.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fDate :
10/1/1992 12:00:00 AM
Abstract :
Ensemble Monte Carlo simulations are employed in order to explore the feasibility of a novel real-space transfer logic transistor (RSTLT) structure. The operational principles of the proposed RSTLT are based on the concept of hot electron real-space transfer (RST), including the fact that the spatial location of electron RST is determined by applied bias and heterointerface energy barrier height in a multiterminal heterojunction microstructure. The results of two-dimensional, self-consistent steady-state and transient simulations demonstrate that the proposed RSTLT features ultrafast current switching which can be used to realize NOT/EQUIVALENT logic functions in a single heterojunction device. The logic operation is easily extended to NOR/AND functions. A conservative estimate of the characteristic delay time for current switching is ~3 ps in the proposed RSTLT structure
Keywords :
Monte Carlo methods; hot carriers; hot electron transistors; logic devices; semiconductor device models; semiconductor switches; simulation; 2D steady state simulation; 3 ps; HET; Monte Carlo simulations; NOR/AND functions; NOT/EQUIVALENT logic functions; RSTLT structure; applied bias; characteristic delay time; heterointerface energy barrier height; hot electron real-space transfer; multiterminal heterojunction microstructure; real-space transfer logic transistor; transient simulations; ultrafast current switching; Delay effects; Electrons; Energy barrier; FETs; Gallium arsenide; Heterojunctions; Indium gallium arsenide; Logic devices; Microstructure; Microwave transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
