Title :
Space-charge region recombination in heterojunction bipolar transistors
Author :
Parikh, Chetan D. ; Lindholm, Fredrik A.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
fDate :
10/1/1992 12:00:00 AM
Abstract :
A new comprehensive model for space-charge region (SCR) recombination current in abrupt and graded energy gap heterojunction bipolar transistors (HBTs) is derived. It is shown that if a spike is present in one of the bands at the heterojunction interface, the SCR recombination current becomes interrelated with the collector current. A previously proposed charge control model for the HBT is modified to include the SCR recombination current. The model is used to study SCR recombination characteristics in HBTs
Keywords :
electron-hole recombination; energy gap; heterojunction bipolar transistors; semiconductor device models; space charge; HBT; abrupt energy gap; charge control model; collector current; graded energy gap; heterojunction bipolar transistors; heterojunction interface; model; recombination current; space-charge region; Bipolar transistors; Current density; Helium; Heterojunction bipolar transistors; Integral equations; Predictive models; Radiative recombination; Semiconductor materials; Silicon; Thyristors;
Journal_Title :
Electron Devices, IEEE Transactions on
