Analysis of the emitter-down configuration of double-heterojunction bipolar transistor

Author

Zhang, Q.M. ; Lee, K. ; Tan, Gen Lin ; Xu, J.M.

Author_Institution

Dept. of Electr. Eng., Toronto Univ., Ont., Canada

Volume

39

Issue

10

fYear

1992

fDate

10/1/1992 12:00:00 AM

Firstpage

2220

Lastpage

2228

Abstract

A two-dimensional numerical study of the parasitic effects on current gain β and cutoff frequency f_T of the emitter-down configuration of AlGaAs-GaAs double-heterojunction bipolar transistors (DHBTs) is reported. The studied structures include: those with and without the extrinsic emitter regions; a structure with oxygen implantation in the extrinsic emitter region; and two structures with P ⁺ dopant implantation of 1000 and 300 Å into the extrinsic emitter region. Analysis of the structures with and without the extrinsic emitter region shows that parasitic effects associated with the extrinsic emitter seriously degrade β and f_T, and lead to extremely asymmetric DHBT operation. The three structures with the extrinsic emitter region modified by the implantations exhibit improved β and f_T at low bias. However, the effectivenesses of the implant approaches in minimizing the parasitics are quite different

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; ion implantation; semiconductor device models; AlGaAs-GaAs; GaAs:O; GaAs:P; O implantation; P⁺ dopant implantation; asymmetric DHBT operation; current gain; cutoff frequency; double-heterojunction bipolar transistor; emitter-down configuration; extrinsic emitter regions; parasitic effects; two-dimensional numerical study; Analytical models; Bipolar integrated circuits; Bipolar transistors; Cutoff frequency; DH-HEMTs; Degradation; Gallium arsenide; Implants; Low voltage; Semiconductor devices;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.158791

Filename

158791