Title :
Single-event effect ground test issues
Author_Institution :
Aerosp. Corp., El Segundo, CA, USA
fDate :
4/1/1996 12:00:00 AM
Abstract :
Ground-based single event effect (SEE) testing of microcircuits permits characterization of device susceptibility to various radiation induced disturbances, including: (1) single event upset (SEU) and single event latchup (SEL) in digital microcircuits; (2) single event gate rupture (SEGR), and single event burnout (SEB) in power transistors; and (3) bit errors in photonic devices. These characterizations can then be used to generate predictions of device performance in the space radiation environment. This paper provides a general overview of ground-based SEE testing and examines in critical depth several underlying conceptual constructs relevant to the conduct of such tests and to the proper interpretation of results. These more traditional issues are contrasted with emerging concerns related to the testing of modern, advanced microcircuits
Keywords :
aerospace testing; integrated circuit testing; radiation effects; radiation hardening (electronics); semiconductor device testing; space vehicle electronics; SRAM; bit errors; device performance; digital microcircuits; ground test; heavy ions; neutrons; photonic devices; power transistors; predictions; protons; radiation induced disturbances; semiconductor device susceptibility; single event burnout; single event gate rupture; single event latchup; single event upset; space radiation environment; Belts; Character generation; Cosmic rays; Electrons; Ionization; Power transistors; Semiconductor materials; Single event upset; Stochastic processes; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
